avionics applications rf & microwave transistors .400 sq. 2lfl (m103) epoxy sealed description the SD1538-02 is a gold metallized silicon, npn power transistor designed for applications requiring high peak power and low duty cycles such as iff, dme and tacan. the SD1538-02 is pack- aged in a metal/ceramic package with internal input/output matching resulting in improved broad- band performance and a low thermal resistance. pin connection branding sd1538-2 order code SD1538-02 absolute maximum ratings (t case = 25 c) symbol parameter value unit v cbo collector-base voltage 65 v v ces collector-emitter voltage 65 v v ebo emitter-base voltage 3.5 v i c device current 11.0 a p diss power dissipation 583 w t j junction temperature +200 c t stg storage temperature - 65 to +150 c r th(j-c) junction-case thermal resistance 0.30 c/w SD1538-02 1. collector 3. emitter 2. base 4. base thermal data november 1992 . designed for high power pulsed iff, dme, tacan applications . 200 watts (typ.) iff 1030 - 1090 mhz . 150 watts (min.) dme 1025 - 1150 mhz . 140 watts (typ.) tacan 960 - 1215 mhz . 7.8 db min. gain . refractory gold metallization . emitter ballasting and low thermal resistance for reliability and ruggedness . 30:1 load vswr capability at specified operating conditions . input/output matched, common base configuration 1/5
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 1025 1150mhz p in = 25.0 w v ce = 50 v 150 w g p f = 1025 1150mhz p in = 25.0 w v ce = 50 v 7.8 db note: pulse width = 10 m sec, duty cycle = 1% this device is suitable for use under other pulse width/duty cycle c onditions. please contact the factory for specific applications assistance. static symbol test conditions value unit min. typ. max. bv cbo i c = 10ma i e = 0ma 65 v bv ces i c = 25ma v be = 0v 65 v bv ebo i e = 5ma i c = 0ma 3.5 v i ces v ce = 50v i e = 0ma 10 ma h fe v ce = 5v i c = 300ma 5 dynamic typical performance power output vs power input power output vs frequency SD1538-02 2/5
impedance data typical performance (cont'd) efficiency vs power input efficiency vs frequency typical input impedance typical collector load impedance SD1538-02 3/5
c1, c2 : .6 - 4.5pf gigatrim c3 : .100 x .100 120pf chip capacitor c4 : .100 x .100 470pf chip capacitor c5 : 100mf electrolytic l1 : #20 awg l2 : 3 turns, #20 awg wound on #32 drill bit z1 : .195 x .415 z2 : .685 x .230 z3 : .080 x .105 z4 : .845 x .345 z5 : .640 x .470 z6 : .070 x .405 z7 : .740 x .180 z8 : .50 x .325 test circuit and pc board layout SD1538-02 4/5
package mechanical data ref.: dwg. no.12-0103 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a SD1538-02 5/5
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